Determine the trip voltages these values will actually
yield for rising and falling voltages. Rising voltages use
the V
REF
= 1.25V reference threshold, while falling volt-
ages use V
LO
= 1.125V reference threshold.
1) R
TOT
= R
1
+ R
2
+ R
3
+ R
4
2) V
OV,RISING
= V
REF
x R
TOT
/ R
4
3) V
OV,FALLING
= V
LO
x R
TOT
/ R
4
4) V
ON,RISING
= V
REF
x R
TOT
/ (R
3
+ R
4
)
5) V
ON,FALLING
= V
LO
x R
TOT
/ (R
3
+ R
4
)
6) V
OFF
= V
REF
x R
TOT
/ (R
2
+ R
3
+ R
4
)
The resulting voltage levels are V
OV,RISING
= 79.82V
?.5%, V
OV,FALLING
= 71.84V ?%, V
ON,RISING
=
42.32V ?.5%, V
ON,FALLING
= 38.09V ?%, and V
OFF
= 38.26V ?.5%. The voltage tolerance does not
account for the tolerance of the resistors.
Setting the Circuit-Breaker and
Short-Circuit Thresholds
The MAX5938 can operate with a wide range of power
MOSFETs to meet the requirements of almost any appli-
cation. MOSFETs mentioned here are done to demon-
strate certain capabilities and features of the MAX5938.
They should not be construed as a recommendation or a
limitation of the interoperability of the MAX5938.
In the implementation of the circuit-breaker and short-
circuit functions, the MAX5938 eliminates the need for
an external current-sense resistor at the source of the
power MOSFET. As in any other hot-swap controller,
the proper circuit-breaker threshold for an application
must take into account the DC level of V
OUT
, while at
the same time accommodating the AC response of
V
OUT
to the modulation of V
IN
. The AC response from
V
IN
to V
OUT
is dependent on the parasitics of the load,
especially the load capacitor, in conjunction with the
R
DS(ON)
of the power MOSFET. It behaves as a highly
dampened second-order system. As such, this system
functions as a bandpass filter from V
IN
to V
OUT
. The
response of V
OUT
to load-switching currents and volt-
age ripple and noise from the backplane power supply
must be taken into account. Adequate margin must be
provided between V
CB
, V
SC
, and the DC level of V
OUT
,
which depends on the R
DS(ON)
of the power MOSFET
(with V
GS
at 10V) and the maximum current the load is
expected to draw. While the circuit-breaker threshold
has glitch rejection for V
OUT
excursions lasting less
than 1.4ms, the short-circuit detection is designed to
respond very quickly (less than 330ns) to a short cir-
cuit. In the application, select a value for R
CB_ADJ
resulting in a V
CB
that exceeds the product of R
DS(ON)
and the maximum load current plus one half the peak-
to-peak AC response of V
OUT
to load-switching cur-
rents and the noise and ripple at V
IN
:
R
DS(ON)
(&) x I
LOAD,MAX
(mA) +
1
/
2
x VOUT
AC
< V
CB
(mV)
where
V
CB
(mV) =
1
/
2
x I
CB_ADJ
(礎) x [R
INT
(k&)
+ R
CB_ADJ
(k&)]
R
DS(ON)
in a power MOSFET has a positive tempera-
ture coefficient and the MAX5938, when placed adja-
cent to the power MOSFET, tracks and compensates
for this temperature coefficient. In the MAX5938, V
CB
is
half of V
SC
, which is set by placing an external resis-
tance between CB_ADJ and V
EE
. The minimum
(default) short-circuit threshold voltage, V
SC
, is set by
an internal 2k& precision-trimmed (?.5%) resistor pro-
viding a minimum series resistance and a temperature-
compensated 50礎 (+25癈) current source. When
CB_ADJ is connected to V
EE
this gives a 50mV circuit-
breaker threshold. When an external resistor, R
CB_ADJ
,
is placed between CB_ADJ and V
EE
, the new circuit-
breaker threshold becomes:
V
CB
(mV) =
1
/
2
x V
SC
(mV) =
1
/
2
x I
CB_ADJ
(礎)
x (2k& + R
CB_ADJ
)
and at +25癈, it becomes:
V
CB
(mV) =
1
/
2
V
SC
(mV) =
1
/
2
x 50礎
x (2k& + R
CB_ADJ
)
The short-circuit and circuit-breaker voltages are sensed
at V
OUT
, which is the drain of the power MOSFET. The
R
DS(ON)
of the MOSFET is the current-sense resistance
and so the total current through the load and load
capacitance is the drain current of the power MOSFET.
Accordingly, the voltage at V
OUT
as a function of
MOSFET drain current is:
V
OUT
= I
D,MOSFET
x R
DS(ON)
The temperature compensation of the MAX5938 is
designed to track the R
DS(ON)
of the typical power
MOSFET. Figure 14 shows the typical normalized temp-
co of the circuit-breaker threshold along with the nor-
malized tempco of R
DS(ON)
for several typical power
MOSFETS. When determining the circuit-breaker
threshold in an application go to the power MOSFET
manufacturers data sheet and locate the maximum
R
DS(ON)
at +25癈 with a V
GS
of 10V. Next, find the fig-
ure presenting the tempco of normalized R
DS(ON)
or
on-resistance vs. temperature. Since this curve is in
-48V Hot-Swap Controller with V
IN
Step Immunity,
No R
SENSE
, and Overvoltage Protection
______________________________________________________________________________________   15
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